SK keyfoundry unveils new multi level thick IMD process with very high breakdown voltage
Press Release, 24 September 2025
SK keyfoundry, a specialist 8-inch analogue and mixed-signal foundry in Korea, has introduced its latest Multi-Level Thick IMD (Inter-Metal Dielectric) process designed for capacitors, boasting standout voltage performance. This new process allows up to three IMD layers, each as thick as 6 micrometres, enabling a cumulative dielectric thickness of up to 18 µm. With these specs, the technology achieves a breakdown voltage of roughly 19,000 volts, while maintaining strong capacitance.
What makes this process especially relevant is its qualification under the AEC-Q100 automotive standard, which means it meets the rigorous demands of reliability in harsh environments. It has passed Time Dependent Dielectric Breakdown (TDDB) testing by major customers, proving its endurance for long-term use. SK keyfoundry also notes compatibility with established BCD (Bipolar-CMOS-DMOS) process nodes like 0.13 µm and 0.18 µm, making integration into automotive semiconductor designs more seamless.
This development could have big implications for sectors that require robust isolation and high immunity to electrical noise — such as electric vehicles, industrial electronics, telecoms, and healthcare. The process design toolkit is ready too: SK keyfoundry is offering support resources like PDK (Process Design Kit), DRC (Design Rule Checking), LVS (Layout Versus Schematic), LPE, and Pcells to help developers adopt the technology faster.
In summary, SK keyfoundry’s Multi-Level Thick IMD process represents a significant advance in capacitor dielectric technology, combining high voltage tolerance, automotive reliability, and design support — an attractive package for electronics and automotive manufacturers pushing the limits of performance and durability.
Source: PR Newswire
