onsemi unveils vertical GaN semiconductors to power the AI and EV energy revolution
Press Release, 31 October 2025
As global energy demand accelerates with the growth of AI data centers, electric vehicles, and renewable power systems, onsemi has announced a breakthrough in power semiconductor technology with its new vertical gallium nitride (vGaN) devices. Developed at the company’s Syracuse, New York facility, these GaN-on-GaN semiconductors redefine power density, efficiency, and ruggedness for next-generation energy systems.
Unlike traditional lateral GaN devices that conduct current across the surface, onsemi’s vGaN technology conducts current vertically through the GaN substrate. This innovation allows higher voltage operation — up to 1,200V and beyond — and faster switching speeds, resulting in up to 50% less energy loss and significantly smaller, lighter systems. The company is currently sampling both 700V and 1,200V devices for early-access customers.
The proprietary vGaN technology, protected by over 130 global patents, is engineered to meet the power demands of energy-intensive sectors such as AI data centers, EV inverters, charging infrastructure, renewable energy, and aerospace and defense. By enabling higher frequency operation, vGaN reduces the size of key passive components like capacitors and inductors — cutting system weight and cost while improving performance.
According to Dinesh Ramanathan, Senior VP of Corporate Strategy at onsemi, “Vertical GaN is a game-changer for the industry and cements onsemi’s leadership in energy efficiency and innovation.”
In an era where electricity has become the new constraint on innovation, onsemi’s vertical GaN technology provides the building block for smaller, cooler, and more efficient power systems, driving the transition toward a more sustainable and electrified world.
