L&T Semiconductor and Foxconn arm join forces to build high-voltage wafers for EVs & power systems
L&T Semiconductor Technologies (LTSCT) has sealed a long-term collaboration with Hon Young Semiconductor (HYS), a subsidiary of Foxconn, to co-develop high-voltage semiconductor wafers spanning from 650 V to 3,300 V. The partnership will also enable L&T to tap into HYS’s fabrication capabilities in Taiwan, accelerating the path from design to production for components vital in automotive electrification and industrial power systems.
Under the agreement, both firms will work closely on wafer design, performance validation, quality control, and scale-up strategies. By combining HYS’s mature wafer manufacturing expertise with L&T’s systems integration and domain knowledge in power electronics, the duo aims to fast-track delivery of reliable, automotive-grade power silicon products.
This move signals a deeper push by L&T into the semiconductor value chain — not just design, but into critical upstream areas supporting India’s ambitions in EVs, renewable energy, and industrial electrification. For Foxconn, this alliance enhances its strategic positioning in power semiconductors — a domain that underpins innovation in electric mobility, inverters, onboard chargers, and industrial systems.
The timing is significant: global demand for high-voltage wafers and SiC (silicon carbide) devices is surging, driven by automotive electrification and energy transition. If successful, this partnership could help India localize part of its power silicon supply, reduce dependence on imports, and support the broader growth of its clean mobility ecosystem.
