iDEAL Semiconductor announce SuperQ™ MOSFET architecture
US-based iDEAL Semiconductor has announced that its advanced SuperQ™ silicon MOSFET architecture has earned the industry-standard AEC-Q101 automotive qualification, a key milestone that paves the way for use in high-reliability automotive systems. Their first car-ready product is the iS20M028S1CQ, a 200 V device rated at 25 mΩ R₍DS(on)₎ and designed for temperatures up to 175 °C.
This qualification means SuperQ technology is now qualified for demanding applications such as electric-vehicle powertrains, onboard chargers, and advanced driver-assistance systems (ADAS), thanks to its high efficiency, low switching losses and solid silicon-based reliability. The iS20M028S1CQ enters mass production and is offered in a compact PDFN 5×6 mm package, making it suitable for volume automotive manufacturing.
In effect, iDEAL has broken new ground in silicon MOSFET design—after years of incremental evolution, SuperQ delivers a major leap in performance that makes silicon viable again even as wide-bandgap devices gain attention. With this move, the company positions itself to serve a broad range of markets—from electrified vehicles to motor drives, AI-server farms and renewable-energy systems. The automotive certification also adds a layer of confidence for OEMs looking to integrate the MOSFET into next-generation drivetrain and charging architectures.
For the automotive world, such an advancement underscores the push toward more efficient power electronics inside EVs and hybrid vehicles—where every gain in efficiency translates into longer range, smaller heat dissipation and cost-savings. With iDEAL’s SuperQ making the move into automotive grade production, the silicon MOSFET ecosystem may well be primed for a revival.
Source: idealsemi.com



